Manufacturer Part Number
STGWA60H65DFB
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor with trench field-stop technology, designed for power conversion and motor drive applications.
Product Features and Performance
Trench field-stop IGBT technology
Optimized for low conduction and switching losses
High current capability up to 80A
High voltage rating up to 650V
Fast switching with short turn-on/off delays
Low gate charge for efficient gate driving
Product Advantages
Efficient power conversion with low losses
Compact design with high power density
Reliable performance in demanding applications
Easy to integrate into power electronics systems
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
Reverse Recovery Time (trr): 60ns
Gate Charge: 306nC
Current Collector Pulsed (Icm): 240A
Switching Energy: 1.59mJ (on), 900J (off)
Td (on/off) @ 25°C: 66ns/210ns
Quality and Safety Features
Compliant with RoHS3 environmental regulations
Robust TO-247-3 package for high reliability
Compatibility
Suitable for various power conversion and motor drive applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation equipment
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Compact and reliable design for demanding applications
Ease of integration into power electronics systems
Proven technology and quality from a reputable manufacturer
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