STGWT30H65FB - STMicroelectronics

Manufacturer Part Number

STGWT30H65FB

Manufacturer

STMicroelectronics

Introduction

The STGWT30H65FB is a high-performance Trench Field Stop IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. It is a discrete semiconductor device designed for a wide range of power electronics applications.

Product Features and Performance

Trench Field Stop IGBT technology for improved performance and efficiency

High voltage rating of 650V

High current capability of 30A continuous and 120A pulsed

Low on-state voltage (Vce(on)) of 2V at 15V gate voltage and 30A collector current

Fast switching with turn-on and turn-off times of 37ns and 146ns respectively

High power handling capability of 260W

Product Advantages

Excellent power conversion efficiency

High reliability and ruggedness

Suitable for high-power, high-frequency switching applications

Easy to integrate into power electronics designs

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 650V

Current Collector (Ic) (Max): 30A

Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A

Gate Charge: 149nC

Switching Energy: 151J (on), 293J (off)

Td (on/off) @ 25°C: 37ns/146ns

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

TO-3P package is widely used in power electronics applications

Application Areas

Inverters and converters for industrial motor drives

Switch-mode power supplies

Uninterruptible power supplies (UPS)

Solar inverters and wind turbine converters

Welding equipment

Electric vehicle drivetrain systems

Product Lifecycle

Currently in production

No plans for discontinuation

Replacement or upgraded models may become available in the future

Key Reasons to Choose This Product

High power density and efficiency

Fast switching performance

Robust and reliable design

Ease of integration into power electronics systems

Suitable for a wide range of high-power applications