STGWT30V60DF - STMicroelectronics

Manufacturer Part Number

STGWT30V60DF

Manufacturer

STMicroelectronics

Introduction

High-power IGBT in TO-3P package for industrial applications

Product Features and Performance

Trench field stop IGBT technology

600V collector-emitter breakdown voltage

60A collector current rating

3V collector-emitter saturation voltage at 15V gate, 30A collector

53ns reverse recovery time

163nC gate charge

Product Advantages

Optimized for high-power switching applications

Robust design with high short-circuit capability

Low conduction and switching losses

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 60A

Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A

Reverse Recovery Time (trr): 53ns

Gate Charge: 163nC

Current Collector Pulsed (Icm): 120A

Switching Energy: 383mJ (on), 233mJ (off)

Td (on/off) @ 25°C: 45ns/189ns

Quality and Safety Features

ROHS3 compliant

Wide operating temperature range: -55°C to 175°C

Compatibility

TO-3P package, through-hole mounting

Application Areas

Industrial applications requiring high-power switching, such as motor drives, power supplies, and inverters

Product Lifecycle

Current product, no known discontinuation plans

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Optimized trench field stop IGBT technology for high efficiency and robustness

High power handling capability with 600V voltage rating and 60A current rating

Low conduction and switching losses for improved system efficiency

Compact TO-3P package with through-hole mounting for easy integration