Manufacturer Part Number
STGWT40V60DF
Manufacturer
STMicroelectronics
Introduction
High-power discrete semiconductor component
Insulated Gate Bipolar Transistor (IGBT)
Product Features and Performance
Trench field stop IGBT technology
Collector-Emitter Voltage (VCE(max)): 600V
Collector Current (IC(max)): 80A
Low on-state voltage (VCE(on)): 2.3V @ 15V, 40A
Fast switching with short turn-on/off times: 52ns/208ns
High power handling: 283W
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Compact and thermally efficient design
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 80A
Reverse Recovery Time (trr): 41ns
Gate Charge: 226nC
Current Collector Pulsed (Icm): 160A
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Package: TO-3P-3, SC-65-3
Application Areas
Power conversion and control systems
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Traction and rail applications
Product Lifecycle
Mature product, no imminent discontinuation
Replacement and upgrade options available
Key Reasons to Choose This Product
High power handling and efficiency
Fast switching with low losses
Robust and reliable performance
Wide operating temperature range
Compact and thermally efficient design
RoHS compliance for environmental safety
STGY40NC60VDSTMicroelectronicsIGBT 600V 80A 260W MAX247