Manufacturer Part Number
STGY50NC60WD
Manufacturer
STMicroelectronics
Introduction
High-performance IGBT transistor suitable for power conversion applications.
Product Features and Performance
High current capability up to 110A
High voltage rating up to 600V
Low on-state voltage drop of 2.6V at 40A
Fast switching with reverse recovery time of 55ns
High power handling up to 278W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion performance
Robust and reliable operation
Compact and easy to integrate design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 110A
On-State Voltage Drop: 2.6V
Reverse Recovery Time: 55ns
Power Dissipation: 278W
Quality and Safety Features
RoHS3 compliant
Tested and qualified to industrial standards
Compatibility
Suitable for use in power conversion, motor control, and other industrial applications
Application Areas
Power inverters
Motor drives
Welding equipment
Induction heating
Solar power systems
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement parts and upgrades available
Key Reasons to Choose This Product
High-performance power handling capabilities
Efficient and reliable operation
Wide operating temperature range
Easy to integrate into various designs
Compliance with safety and environmental standards
STGWT50HF65SDSTMicroelectronics