Manufacturer Part Number
STGYA120M65DF2
Manufacturer
STMicroelectronics
Introduction
Power Transistor, IGBT, Single, Trench Field Stop, 650V, 160A
Product Features and Performance
NPT, Trench Field Stop IGBT
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 160A
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 120A
Reverse Recovery Time (trr): 202ns
Gate Charge: 420nC
Current Collector Pulsed (Icm): 360A
Switching Energy: 1.8mJ (on), 4.41mJ (off)
Td (on/off) @ 25°C: 66ns/185ns
Product Advantages
High voltage and current handling capability
Fast switching performance
Low conduction and switching losses
Key Technical Parameters
Operating Temperature: -55°C ~ 175°C (TJ)
Power Max: 625W
IGBT Type: NPT, Trench Field Stop
Input Type: Standard
Quality and Safety Features
RoHS3 Compliant
Mounting Type: Through Hole
Package / Case: TO-247-3 Exposed Pad
Compatibility
Can be used in a wide range of power electronics applications, such as motor drives, power supplies, and inverters.
Application Areas
Industrial motor drives
Power supplies
Inverters
General power electronics applications
Product Lifecycle
The STGYA120M65DF2 is an active and available product. There are no reports of it nearing discontinuation, and replacement or upgrade options are available from STMicroelectronics.
Key Reasons to Choose This Product
High voltage and current handling capability
Fast switching performance for improved efficiency
Low conduction and switching losses for better thermal management
RoHS3 compliance for environmental sustainability
Wide operating temperature range for versatile applications
Through-hole mounting for ease of integration