Manufacturer Part Number
STGWT80H65DFB
Manufacturer
STMicroelectronics
Introduction
High power IGBT transistor for industrial applications
Product Features and Performance
Trench field stop IGBT technology
High current capability up to 120A
Low on-state voltage drop
Fast switching speed
High power density
Product Advantages
Efficient power conversion
Reduced power losses
Compact design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 120A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Reverse Recovery Time (trr): 85ns
Gate Charge: 414nC
Current Collector Pulsed (Icm): 240A
Switching Energy: 2.1mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C: 84ns/280ns
Quality and Safety Features
RoHS3 compliant
Operating Temperature: -55°C ~ 175°C (TJ)
Through hole mounting
Compatibility
TO-3P package
Application Areas
Industrial motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Servo drives
Product Lifecycle
Current production model, no discontinuation planned
Replacement models available if needed
Key Reasons to Choose This Product
High power handling capability
Efficient power conversion with low losses
Fast switching speed for high-frequency applications
Compact and robust design for industrial environments
Proven reliability and quality from STMicroelectronics
