Manufacturer Part Number
STGWT60H65DFB
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor IGBT
Product Features and Performance
Trench Field Stop IGBT
650V Collector-Emitter Breakdown Voltage
80A Collector Current Rating
2V Collector-Emitter Saturation Voltage @ 15V, 60A
60ns Reverse Recovery Time
306nC Gate Charge
240A Pulsed Collector Current
09mJ Turn-On Switching Energy, 626μJ Turn-Off Switching Energy
51ns Turn-On Delay, 160ns Turn-Off Delay
Product Advantages
High voltage and current handling capability
Low conduction and switching losses
Robust trench field stop design
Key Technical Parameters
Voltage Rating: 650V
Current Rating: 80A
Package: TO-3P-3
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C to 175°C
Compatibility
TO-3P package
Application Areas
Power conversion and motor drive applications
Welding equipment
Uninterruptible power supplies (UPS)
Induction heating
Product Lifecycle
Currently available product
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
High voltage and current capability
Low conduction and switching losses for improved efficiency
Robust trench field stop design for reliable performance
Wide operating temperature range
TO-3P package compatibility