Manufacturer Part Number
IXXN110N65C4H1
Manufacturer
IXYS Corporation
Introduction
High-power IGBT module with enhanced performance characteristics
Product Features and Performance
High-power capability up to 750W
High current rating up to 210A
Low conduction losses with Vce(on) of 2.35V
Wide operating temperature range of -55°C to 175°C
Integrated PT (punch-through) IGBT technology
Standard input configuration
Single IGBT configuration
Product Advantages
Compact SOT-227B package for efficient thermal management
Robust and reliable performance
Wide range of applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Input Capacitance (Cies): 3.69nF
Collector Current (Ic max): 210A
Collector-Emitter Saturation Voltage (Vce(on)): 2.35V
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Suitable for a variety of industrial and power electronics applications
Application Areas
Motor drives
Power conversion systems
Welding equipment
Inverters
Uninterruptible Power Supplies (UPS)
Product Lifecycle
This product is not nearing discontinuation
Replacement and upgrade options are available
Key Reasons to Choose This Product
High-power capability up to 750W
Low conduction losses for improved efficiency
Wide operating temperature range for versatile applications
Compact and robust package design
Reliable and safe performance