IXXN200N60B3 - IXYS

Manufacturer Part Number

IXXN200N60B3

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) module.

Product Features and Performance

IGBT module with 600V collector-emitter voltage rating

Capable of handling up to 940W of power

Positive Temperature Coefficient (PT) IGBT type

Standard input configuration

Single IGBT configuration

Input capacitance of 9.97nF at 25V collector-emitter voltage

Maximum collector current of 280A

Maximum collector-emitter saturation voltage of 1.7V at 15V gate-emitter voltage and 100A collector current

Maximum collector cutoff current of 50A

Operating temperature range of -55°C to 175°C

Product Advantages

Robust and reliable performance

Efficient power handling capabilities

Suitable for a wide range of applications

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 600V

Current Collector (Ic) (Max): 280A

Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A

Current Collector Cutoff (Max): 50A

Input Capacitance (Cies) @ Vce: 9.97nF @ 25V

Quality and Safety Features

RoHS3 compliant

Chassis mount package (SOT-227B)

Compatibility

This IGBT module is compatible with a variety of power electronics applications.

Application Areas

Power conversion

Motor control

Inverters

Welding equipment

Industrial automation

Renewable energy systems

Product Lifecycle

The IXXN200N60B3 is an active product and is not nearing discontinuation. Replacements and upgrades may be available from the manufacturer.

Key Reasons to Choose This Product

Robust and reliable performance

High power handling capability

Efficient operation

Wide operating temperature range

Compatibility with various power electronics applications