Manufacturer Part Number
IXXN200N60B3
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) module.
Product Features and Performance
IGBT module with 600V collector-emitter voltage rating
Capable of handling up to 940W of power
Positive Temperature Coefficient (PT) IGBT type
Standard input configuration
Single IGBT configuration
Input capacitance of 9.97nF at 25V collector-emitter voltage
Maximum collector current of 280A
Maximum collector-emitter saturation voltage of 1.7V at 15V gate-emitter voltage and 100A collector current
Maximum collector cutoff current of 50A
Operating temperature range of -55°C to 175°C
Product Advantages
Robust and reliable performance
Efficient power handling capabilities
Suitable for a wide range of applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 280A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Current Collector Cutoff (Max): 50A
Input Capacitance (Cies) @ Vce: 9.97nF @ 25V
Quality and Safety Features
RoHS3 compliant
Chassis mount package (SOT-227B)
Compatibility
This IGBT module is compatible with a variety of power electronics applications.
Application Areas
Power conversion
Motor control
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
The IXXN200N60B3 is an active product and is not nearing discontinuation. Replacements and upgrades may be available from the manufacturer.
Key Reasons to Choose This Product
Robust and reliable performance
High power handling capability
Efficient operation
Wide operating temperature range
Compatibility with various power electronics applications