APT100GT60JR - Microchip Technology

Manufacturer Part Number

APT100GT60JR

Manufacturer

Microchip Technology

Introduction

High-performance insulated-gate bipolar transistor (IGBT) module for power conversion and control applications

Product Features and Performance

Power rating up to 500 W

Voltage rating of 600 V

Current rating of 148 A

Low collector-emitter saturation voltage (Vce(on))

Short-circuit withstand time

Positive temperature coefficient of on-state voltage

Rugged and reliable design

Product Advantages

Efficient power conversion and control

High power density

Robust and reliable performance

Easy to integrate into power electronic systems

Key Technical Parameters

IGBT type: NPT (non-punch-through)

Input configuration: Single

Input capacitance (Cies): 5.15 nF @ 25 V

Collector-emitter breakdown voltage (Vceo): 600 V

Collector current (Ic): 148 A

Collector-emitter saturation voltage (Vce(on)): 2.5 V @ 15 V, 100 A

Quality and Safety Features

RoHS3 compliant

Designed for reliable and safe operation

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Inverters

Converters

Motor drives

Power supplies

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacements and upgrades may be available in the future as Microchip continues to develop new IGBT products.

Key Reasons to Choose This Product

High power density and efficiency for power conversion and control

Robust and reliable performance for demanding applications

Easy integration into power electronic systems

Availability of technical support and resources from Microchip Technology