APT100GT60JRDQ4 - Microchip Technology

Manufacturer Part Number

APT100GT60JRDQ4

Manufacturer

Microchip Technology

Introduction

High-performance Insulated Gate Bipolar Transistor (IGBT) module

Designed for use in industrial and power conversion applications

Product Features and Performance

600V IGBT with low conduction and switching losses

Optimized for high-frequency switching

Compact ISOTOP package design

Able to operate at high temperatures up to 150°C

Product Advantages

Improved efficiency and thermal performance

Compact and space-saving design

Reliable and robust construction

Key Technical Parameters

Voltage rating: 600V

Current rating: 148A

Power rating: 500W

IGBT type: NPT (Non-Punch-Through)

Input capacitance: 5.15nF

Collector-emitter saturation voltage: 2.5V

Quality and Safety Features

RoHS3 compliant

Isolated package design for safety

Compatibility

Suitable for use in various industrial and power conversion applications

Application Areas

Industrial motor drives

Power inverters

Uninterruptible power supplies (UPS)

Renewable energy systems

Product Lifecycle

Currently available, no plans for discontinuation

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High-performance IGBT with low losses for improved efficiency

Compact and robust ISOTOP package design

Reliable operation at high temperatures up to 150°C

Suitable for a wide range of industrial and power conversion applications