APT100M50J - Microchip Technology

Manufacturer Part Number

APT100M50J

Manufacturer

Microchip Technology

Introduction

High-performance N-channel MOSFET with low on-resistance and high blocking voltage for power electronics applications.

Product Features and Performance

High drain-to-source breakdown voltage of 500 V

Very low on-resistance of 38 mΩ at 75 A, 10 V

High continuous drain current of 103 A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching capabilities with low gate charge of 620 nC at 10 V

High power dissipation of 960 W at 25°C case temperature

Product Advantages

Excellent performance for high-voltage, high-current power electronics

Compact SOT-227 package for efficient heat dissipation

Reliable and robust design for industrial and automotive applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 500 V

Gate-to-Source Voltage (Vgs): ±30 V

On-Resistance (Rds(on)): 38 mΩ at 75 A, 10 V

Continuous Drain Current (ID): 103 A at 25°C

Input Capacitance (Ciss): 24,600 pF at 25 V

Gate Charge (Qg): 620 nC at 10 V

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability industrial and automotive applications

Compatibility

Chassis mount SOT-227 package

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial and automotive power electronics

Product Lifecycle

This product is currently in active production and not nearing discontinuation.

Replacements and upgrades are available from Microchip Technology.

Key Reasons to Choose This Product

Excellent performance and efficiency for high-voltage, high-current power electronics

Compact and thermally efficient SOT-227 package

Reliable and robust design for demanding industrial and automotive applications

Wide operating temperature range and RoHS3 compliance for versatile use

Ongoing product support and availability of replacements from Microchip Technology