Manufacturer Part Number
APT10M07JVFR
Manufacturer
Microchip Technology
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current capacity.
Product Features and Performance
100V drain-to-source voltage
7 mΩ maximum on-resistance at 500 mA, 10V
225A continuous drain current at 25°C
21,600 pF maximum input capacitance at 25V
4V maximum gate threshold voltage at 5 mA
1,050 nC maximum gate charge at 10V
Product Advantages
Excellent efficiency and low power loss
High current handling capability
Compact ISOTOP package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
On-Resistance (Rds(on)): 7 mΩ
Continuous Drain Current (Id): 225A
Input Capacitance (Ciss): 21,600 pF
Gate Threshold Voltage (Vgs(th)): 4V
Gate Charge (Qg): 1,050 nC
Quality and Safety Features
RoHS3 compliant
ISOTOP package for improved thermal performance
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Inverters
High-current switching circuits
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from Microchip
Key Reasons to Choose This Product
Excellent efficiency and low power loss
High current handling capability
Compact and thermally efficient ISOTOP package
Suitable for a wide range of power conversion and control applications
Backed by Microchip's reputation for quality and reliability
APT100S20BMicrosemi