Manufacturer Part Number
APT10DC120HJ
Manufacturer
microsemi
Introduction
The APT10DC120HJ is a state-of-the-art silicon carbide Schottky diode.
Product Features and Performance
Silicon Carbide Schottky technology
Single phase diode bridge rectifier
High peak reverse voltage of 1.2 kV
Average rectified current of 10 A
Low forward voltage drop - 1.8 V @ 10 A
200 µA @ 1200 V low reverse leakage current
High operating temperature range from -55°C to 175°C
Product Advantages
High-efficiency energy conversion
Low power losses
Reduced thermal footprint
Enhanced thermal management capabilities
Higher reliability and longevity compared to traditional silicon diodes
Key Technical Parameters
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Operating Temperature: -55°C to 175°C
Quality and Safety Features
Rugged chassis mount design for stability
SOT-227-4, miniBLOC package for effective heat dissipation
Compatibility
Compatible with high-frequency and high-temperature applications
Application Areas
Switch-mode power supplies
High-frequency inverters
Power factor correction circuits
Motor drives
Renewable energy systems
Product Lifecycle
The product is currently active with no indication of discontinuation.
Replacements and upgrades available if necessary through microsemi's product line.
Several Key Reasons to Choose This Product
High voltage handling capability ensures suitability for challenging power environments.
The efficiency of SiC technology minimizes energy loss and reduces operating costs.
Robust construction makes it ideal for industrial and commercial power applications.
Exceptional thermal performance prolongs the service life of the device.
The active product status guarantees ongoing manufacturer support and availability.
APT10M15JNRMicrosemiIGBT Module
APT100GT60JRDQ4Microchip TechnologyIGBT MOD 600V 148A 500W ISOTOP