APT10M11JVRU3 - Microchip Technology

Manufacturer Part Number

APT10M11JVRU3

Manufacturer

Microchip Technology

Introduction

High-performance N-channel MOSFET with low on-resistance designed for high-power applications

Product Features and Performance

Very low on-resistance (11 mΩ max @ 71 A, 10 V)

High continuous drain current (142 A max @ 25°C case temperature)

High power dissipation (450 W max @ 25°C case temperature)

Wide operating temperature range (-55°C to 150°C)

Low gate charge (300 nC max @ 10 V)

Low input capacitance (8600 pF max @ 25 V)

Product Advantages

Excellent performance for high-power switching and inverter applications

Efficient heat dissipation due to low on-resistance and high power handling

Robust design for reliable operation in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100 V

Gate-to-Source Voltage (Vgs): ±30 V

Threshold Voltage (Vgs(th)): 4 V max @ 2.5 mA

Drive Voltage (Vgs): 10 V

Quality and Safety Features

RoHS3 compliant

Housed in a SOT-227-4, miniBLOC package for efficient heat dissipation

Compatibility

Suitable for high-power switching and inverter applications

Application Areas

Electric vehicles

Industrial motor drives

Power supplies

Welding equipment

Solar inverters

Product Lifecycle

Currently in production

No known plans for discontinuation

Several Key Reasons to Choose This Product

Excellent performance-to-cost ratio for high-power applications

Robust design and wide operating temperature range for reliable operation

Efficient heat dissipation and low on-resistance for improved system efficiency

Proven reliability and quality from a reputable manufacturer