APT11GF120BRDQ1G - Microsemi Corporation

Manufacturer Part Number

APT11GF120BRDQ1G

Manufacturer

Microsemi

Introduction

This is a discrete semiconductor product, specifically a transistor of the IGBT (Insulated Gate Bipolar Transistor) type.

Product Features and Performance

Power Rating: 156 W

IGBT Type: NPT (Non-Punch Through)

Collector-Emitter Breakdown Voltage (Max): 1200 V

Collector Current (Max): 25 A

Collector-Emitter Saturation Voltage (Max): 3 V @ 15 V, 8 A

Gate Charge: 65 nC

Pulsed Collector Current (Max): 24 A

Switching Energy (On/Off): 300 μJ / 285 μJ

Turn-On/Turn-Off Delay Time: 7 ns / 100 ns

Operating Temperature Range: -55°C to 150°C (TJ)

Product Advantages

High voltage and current handling capability

Low on-state voltage and switching losses

Fast switching speed

Wide temperature range operation

Key Technical Parameters

Voltage Rating: 1200 V

Current Rating: 25 A

Package: TO-247-3

Quality and Safety Features

Robust TO-247 package

Compliance with relevant safety standards

Compatibility

This IGBT is compatible with a wide range of electronic circuits and power conversion applications.

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial control systems

Renewable energy systems

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgraded models may become available in the future.

Key Reasons to Choose This Product

High voltage and current handling capability for demanding applications

Low on-state voltage and switching losses for improved efficiency

Fast switching speed for high-frequency operation

Wide temperature range operation for diverse environmental conditions

Robust TO-247 package for reliable performance