APT1201R6BVFRG - Microchip Technology

Manufacturer Part Number

APT1201R6BVFRG

Manufacturer

Microchip Technology

Introduction

High-power N-channel MOSFET for industrial and consumer applications

Product Features and Performance

Drain-to-source voltage up to 1200V

On-state resistance as low as 1.6Ohm

Continuous drain current up to 8A at 25°C case temperature

Low input capacitance of 3660pF

Gate threshold voltage as low as 4V

Maximum gate charge of 230nC

Product Advantages

Excellent high-voltage performance

Low on-state resistance for high efficiency

Suitable for high-power switching applications

Robust design for reliable operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1200V

On-State Resistance (Rds(on)): 1.6Ohm @ 4A, 10V

Continuous Drain Current (Id): 8A @ 25°C

Input Capacitance (Ciss): 3660pF @ 25V

Gate Threshold Voltage (Vgs(th)): 4V @ 1mA

Gate Charge (Qg): 230nC @ 10V

Quality and Safety Features

RoHS3 compliant

TO-247 package for reliable heat dissipation

Compatibility

Compatible with a wide range of industrial and consumer power applications

Application Areas

Switch-mode power supplies

Motor drives

Induction heating

Welding equipment

Other high-power switching applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from Microchip Technology.

Key Reasons to Choose This Product

Excellent high-voltage performance for demanding applications

Low on-state resistance for high efficiency

Robust design for reliable operation

Compatibility with a wide range of power applications

Availability and potential replacement options from the manufacturer