Manufacturer Part Number
APT10M11JVFR
Manufacturer
Microchip Technology
Introduction
High-performance, high-power N-channel power MOSFET designed for efficient power conversion and control applications.
Product Features and Performance
Drain-to-source voltage (Vdss) of 100V
Ultra-low on-resistance (Rds(on)) of 11mΩ @ 500A, 10V
Continuous drain current (Id) of 144A at 25°C
High input capacitance (Ciss) of 10,380pF @ 25V
Low gate charge (Qg) of 450nC @ 10V
N-channel MOSFET technology
Product Advantages
Excellent efficiency and thermal performance
Improved power density and reduced energy losses
Suitable for high-current, high-voltage applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
On-resistance (Rds(on)): 11mΩ @ 500A, 10V
Continuous drain current (Id): 144A at 25°C
Input capacitance (Ciss): 10,380pF @ 25V
Gate charge (Qg): 450nC @ 10V
FET type: N-channel MOSFET
Quality and Safety Features
RoHS3 compliant
Microchip's high-quality manufacturing standards
Compatibility
Compatible with various power conversion and control applications
Application Areas
High-current, high-voltage power conversion and control
Inverters, motor drives, and other power electronics
Product Lifecycle
This product is still actively supported by Microchip Technology
Replacement or upgrade options are available from Microchip
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for improved power density
Ultra-low on-resistance for reduced energy losses
High current and voltage handling capabilities
Robust and reliable design for demanding applications
Compatibility with a wide range of power electronics systems
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