Manufacturer Part Number
APT106N60B2C6
Manufacturer
Microchip Technology
Introduction
High-performance MOSFET transistor designed for efficient power conversion applications.
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 35mOhm
High current capability of 106A
Fast switching speed
Low gate charge of 308nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Robust and reliable performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 35mOhm
Continuous Drain Current (Id): 106A
Input Capacitance (Ciss): 8390pF
Power Dissipation (Tc): 833W
Gate Charge (Qg): 308nC
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Meets high-performance standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Industrial and consumer electronics
Product Lifecycle
Current production model
No plans for discontinuation
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent efficiency and performance
High voltage and current handling capabilities
Low on-resistance for reduced power losses
Fast switching speed for improved system efficiency
Wide operating temperature range for versatile applications
Reliable and robust design for long-term use
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