Manufacturer Part Number
IXXH75N60B3D1
Manufacturer
IXYS Corporation
Introduction
High-performance IGBT transistor for industrial power applications
Product Features and Performance
High power capability up to 750 W
Low on-state voltage drop
Fast switching speed
Low switching losses
Rugged and reliable design
Product Advantages
Excellent thermal performance
Superior short circuit withstand capability
Optimized for high-frequency switching applications
Key Technical Parameters
IGBT Type: PT (Punch-Through)
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 160 A
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A
Reverse Recovery Time (trr): 25 ns
Gate Charge: 107 nC
Current Collector Pulsed (Icm): 300 A
Switching Energy: 1.7mJ (on), 1.5mJ (off)
Td (on/off) @ 25°C: 35ns/118ns
Quality and Safety Features
RoHS3 compliant
Robust TO-247AD package
Compatibility
Suitable for use in a variety of industrial power applications
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Product Lifecycle
Currently available, no plans for discontinuation
Key Reasons to Choose This Product
High power handling capability
Excellent switching performance
Reliable and rugged design
Optimized for high-frequency applications
RoHS compliance for environmental sustainability