IXXH75N60B3D1 - IXYS

Manufacturer Part Number

IXXH75N60B3D1

Manufacturer

IXYS Corporation

Introduction

High-performance IGBT transistor for industrial power applications

Product Features and Performance

High power capability up to 750 W

Low on-state voltage drop

Fast switching speed

Low switching losses

Rugged and reliable design

Product Advantages

Excellent thermal performance

Superior short circuit withstand capability

Optimized for high-frequency switching applications

Key Technical Parameters

IGBT Type: PT (Punch-Through)

Voltage Collector Emitter Breakdown (Max): 600 V

Current Collector (Ic) (Max): 160 A

Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 60A

Reverse Recovery Time (trr): 25 ns

Gate Charge: 107 nC

Current Collector Pulsed (Icm): 300 A

Switching Energy: 1.7mJ (on), 1.5mJ (off)

Td (on/off) @ 25°C: 35ns/118ns

Quality and Safety Features

RoHS3 compliant

Robust TO-247AD package

Compatibility

Suitable for use in a variety of industrial power applications

Application Areas

Inverters

Converters

Motor drives

Power supplies

Welding equipment

Product Lifecycle

Currently available, no plans for discontinuation

Key Reasons to Choose This Product

High power handling capability

Excellent switching performance

Reliable and rugged design

Optimized for high-frequency applications

RoHS compliance for environmental sustainability