IXXH80N65B4H1 - IXYS

Manufacturer Part Number

IXXH80N65B4H1

Manufacturer

IXYS Corporation

Introduction

High-Performance IGBT Transistor

Designed for Switching and Power Conversion Applications

Product Features and Performance

Capable of Handling Up to 625 W of Power

Fast Switching Speeds with Short Turn-On/Turn-Off Times

Low Conduction Losses Due to Low Saturation Voltage

Rugged Design for Reliable Operation

Suitable for Use in Harsh Environments

Product Advantages

Excellent Thermal Characteristics

High Blocking Voltage Capability

Efficient Switching Performance

Robust and Durable Construction

Key Technical Parameters

Collector-Emitter Voltage: 650 V

Collector Current: 160 A

Collector-Emitter Saturation Voltage: 2 V @ 15 V, 80 A

Reverse Recovery Time: 150 ns

Gate Charge: 120 nC

Switching Energy: 3.77 mJ (on), 1.2 mJ (off)

Quality and Safety Features

RoHS3 Compliant

Tested and Validated for Reliable Performance

Compatibility

TO-247-3 Package

Suitable for Use in a Variety of Power Electronics Applications

Application Areas

Motor Drives

Inverters

Switching Power Supplies

Industrial Controls

Renewable Energy Systems

Product Lifecycle

Currently in Production

No Immediate Plans for Discontinuation

Replacement or Upgrade Options Available if Required

Key Reasons to Choose This Product

Excellent Power Handling Capability

Fast and Efficient Switching Performance

Robust and Reliable Design

Suitable for Harsh Environmental Conditions

RoHS Compliance for Environmental Responsibility