Manufacturer Part Number
IXXH80N65B4H1
Manufacturer
IXYS Corporation
Introduction
High-Performance IGBT Transistor
Designed for Switching and Power Conversion Applications
Product Features and Performance
Capable of Handling Up to 625 W of Power
Fast Switching Speeds with Short Turn-On/Turn-Off Times
Low Conduction Losses Due to Low Saturation Voltage
Rugged Design for Reliable Operation
Suitable for Use in Harsh Environments
Product Advantages
Excellent Thermal Characteristics
High Blocking Voltage Capability
Efficient Switching Performance
Robust and Durable Construction
Key Technical Parameters
Collector-Emitter Voltage: 650 V
Collector Current: 160 A
Collector-Emitter Saturation Voltage: 2 V @ 15 V, 80 A
Reverse Recovery Time: 150 ns
Gate Charge: 120 nC
Switching Energy: 3.77 mJ (on), 1.2 mJ (off)
Quality and Safety Features
RoHS3 Compliant
Tested and Validated for Reliable Performance
Compatibility
TO-247-3 Package
Suitable for Use in a Variety of Power Electronics Applications
Application Areas
Motor Drives
Inverters
Switching Power Supplies
Industrial Controls
Renewable Energy Systems
Product Lifecycle
Currently in Production
No Immediate Plans for Discontinuation
Replacement or Upgrade Options Available if Required
Key Reasons to Choose This Product
Excellent Power Handling Capability
Fast and Efficient Switching Performance
Robust and Reliable Design
Suitable for Harsh Environmental Conditions
RoHS Compliance for Environmental Responsibility