Manufacturer Part Number
IXXN110N65B4H1
Manufacturer
IXYS Corporation
Introduction
The IXXN110N65B4H1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from IXYS Corporation. It is designed for use in a wide range of power electronics applications.
Product Features and Performance
High power handling capability up to 750W
Wide operating temperature range of -55°C to 175°C
Low on-state voltage drop for improved efficiency
Fast switching characteristics for high-frequency operation
Robust design for reliable performance
Product Advantages
High power density
Excellent thermal management
Reliable and durable construction
Suitable for a variety of power conversion applications
Key Technical Parameters
IGBT Type: PT (Punch-Through)
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 215A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Current Collector Cutoff (Max): 50A
Input Capacitance (Cies) @ Vce: 3.65nF @ 25V
Quality and Safety Features
RoHS3 compliant
Chassis mount package for efficient heat dissipation
No NTC thermistor included
Compatibility
Suitable for a variety of power conversion applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial automation
Renewable energy systems
Power conversion and control
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from IXYS Corporation.
Several Key Reasons to Choose This Product
Robust and reliable performance with high power handling capability
Efficient thermal management for improved efficiency and reliability
Suitable for a wide range of power electronics applications
Compliant with RoHS3 requirements for environmental responsibility
Backed by the expertise and support of IXYS Corporation