IXXN110N65B4H1 - IXYS

Manufacturer Part Number

IXXN110N65B4H1

Manufacturer

IXYS Corporation

Introduction

The IXXN110N65B4H1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from IXYS Corporation. It is designed for use in a wide range of power electronics applications.

Product Features and Performance

High power handling capability up to 750W

Wide operating temperature range of -55°C to 175°C

Low on-state voltage drop for improved efficiency

Fast switching characteristics for high-frequency operation

Robust design for reliable performance

Product Advantages

High power density

Excellent thermal management

Reliable and durable construction

Suitable for a variety of power conversion applications

Key Technical Parameters

IGBT Type: PT (Punch-Through)

Voltage Collector Emitter Breakdown (Max): 650V

Current Collector (Ic) (Max): 215A

Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A

Current Collector Cutoff (Max): 50A

Input Capacitance (Cies) @ Vce: 3.65nF @ 25V

Quality and Safety Features

RoHS3 compliant

Chassis mount package for efficient heat dissipation

No NTC thermistor included

Compatibility

Suitable for a variety of power conversion applications, such as motor drives, power supplies, and inverters

Application Areas

Industrial automation

Renewable energy systems

Power conversion and control

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from IXYS Corporation.

Several Key Reasons to Choose This Product

Robust and reliable performance with high power handling capability

Efficient thermal management for improved efficiency and reliability

Suitable for a wide range of power electronics applications

Compliant with RoHS3 requirements for environmental responsibility

Backed by the expertise and support of IXYS Corporation