IXXH75N60C3D1 - IXYS

Manufacturer Part Number

IXXH75N60C3D1

Manufacturer

IXYS Corporation

Introduction

High-performance, high-power IGBT transistor with advanced features for efficient power switching applications.

Product Features and Performance

IGBT technology with PT (punch-through) structure

Low on-state voltage drop for high efficiency

Fast switching with low switching losses

High current handling capability up to 150A

High voltage rating up to 600V

Wide operating temperature range of -55°C to 175°C

Product Advantages

Robust and reliable design for demanding applications

Optimized for high-power, high-frequency switching

Excellent thermal management capabilities

Compact and efficient power conversion

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 600V

Collector Current (Max): 150A

On-State Voltage Drop (Max): 2.3V

Reverse Recovery Time: 25ns

Gate Charge: 107nC

Collector Current Pulsed (Max): 300A

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Tested for reliability and safety

Compatibility

Suitable for various power conversion and motor control applications

Compatible with standard IGBT driver circuits

Application Areas

Inverters and converters for renewable energy systems

Motor drives and industrial automation

Uninterruptible power supplies (UPS)

Electric vehicle powertrains

Heavy machinery and industrial equipment

Product Lifecycle

This product is currently in active production and availability is good.

Replacement or upgraded models may become available in the future, but this specific model is not yet nearing discontinuation.

Several Key Reasons to Choose This Product

High efficiency and low power losses for improved system performance

Exceptional reliability and robustness for demanding applications

Comprehensive protection features for safe and reliable operation

Compatibility with a wide range of power electronic systems

Optimized for high-power, high-frequency switching applications