Manufacturer Part Number
NGTB40N135IHRWG
Manufacturer
onsemi
Introduction
The NGTB40N135IHRWG is a high-performance IGBT (Insulated Gate Bipolar Transistor) from onsemi, a leading manufacturer of semiconductor products.
Product Features and Performance
Trench Field Stop IGBT technology for high efficiency and ruggedness
Rated for a maximum collector-emitter voltage of 1350V
Capable of handling a maximum collector current of 80A
Low on-state voltage drop (Vce(on)) of 2.7V at 40A and 15V gate voltage
Fast switching with turn-off time of 250ns at 25°C
High power handling capability of up to 394W
Product Advantages
Excellent electrical characteristics for high-power applications
Robust design for reliable operation
Efficient heat dissipation through the TO-247 package
Compatibility with a wide range of applications
Key Technical Parameters
IGBT Type: Trench Field Stop
Collector-Emitter Breakdown Voltage (Max): 1350V
Collector Current (Max): 80A
On-state Voltage Drop (Vce(on)): 2.7V @ 15V, 40A
Gate Charge: 234nC
Switching Energy (turn-off): 1.3mJ
Quality and Safety Features
RoHS3 compliant for environmental responsibility
Rigorous quality control and testing processes
Compatibility
Suitable for a variety of high-power applications, such as motor drives, power supplies, and industrial equipment
Application Areas
Industrial automation
Power electronics
Motor control
Renewable energy systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer as technology advances.
Key Reasons to Choose This Product
High-performance IGBT design for efficient and reliable power conversion
Excellent electrical characteristics, including high voltage rating and low on-state losses
Robust and thermally efficient TO-247 package for demanding applications
Compatibility with a wide range of high-power electronics systems
Ongoing support and availability from the reputable manufacturer, onsemi
