Manufacturer Part Number
NGTB40N120FL3WG
Manufacturer
onsemi
Introduction
Trench Field Stop IGBT Transistor
Product Features and Performance
160A Collector Current (Ic) Max
1200V Collector-Emitter Breakdown Voltage (VCES)
3V Collector-Emitter Saturation Voltage (VCE(on)) at 15V Gate-Emitter Voltage and 40A Collector Current
136ns Reverse Recovery Time (trr)
212nC Gate Charge
-55°C to 175°C Operating Temperature Range
Product Advantages
High Power Density
Fast Switching Speed
Low Conduction Losses
Reliable Trench Field Stop Technology
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 160A
Power Max: 454W
Reverse Recovery Time (trr): 136ns
Gate Charge: 212nC
Quality and Safety Features
RoHS3 Compliant
TO-247-3 Package
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Industrial Motor Drives
Power Supplies
Welding Equipment
Induction Heating
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Current product, no plans for discontinuation. Replacement or upgrade options available.
Key Reasons to Choose This Product
High power handling capability
Fast switching performance
Low conduction losses
Reliable trench field stop technology
Wide operating temperature range
RoHS3 compliance for environmental safety
