Manufacturer Part Number
NGTB40N120SWG
Manufacturer
onsemi
Introduction
High-performance trench insulated-gate bipolar transistor (IGBT) designed for high-power applications.
Product Features and Performance
Trench IGBT technology for low conduction and switching losses
High power density with a maximum power rating of 535 W
Wide operating temperature range of -55°C to 175°C
Fast switching speed with turn-on time of 116 ns and turn-off time of 286 ns
Low Vce(on) of 2.4 V at 15 V gate voltage and 40 A collector current
High collector-emitter breakdown voltage of 1200 V
Maximum collector current of 80 A, with peak pulsed current of 200 A
Product Advantages
Excellent power efficiency and thermal management
Robust design for reliable operation in high-power applications
Compatible with standard IGBT gate drive circuits
Key Technical Parameters
IGBT Type: Trench
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 80 A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 240 ns
Gate Charge: 313 nC
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 116ns/286ns
Quality and Safety Features
Manufactured in an ISO-certified facility for high quality and reliability
Designed to meet relevant safety standards for high-power electronics
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
High-power industrial applications, such as motor drives, power supplies, and inverters
Renewable energy systems, such as solar inverters and wind turbine converters
Uninterruptible power supplies (UPS) and power conditioning equipment
Product Lifecycle
This product is an active, in-production part from onsemi
Replacements and upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance for high-power applications
Fast switching speed and low switching losses for improved system efficiency
Robust and reliable design for long-lasting operation in demanding environments
Wide operating temperature range for versatile use cases
Compatibility with standard IGBT gate drive circuits for easy integration
