Manufacturer Part Number
NGTB40N120L3WG
Manufacturer
onsemi
Introduction
High-performance trench field-stop insulated-gate bipolar transistor (IGBT)
Product Features and Performance
Optimized for fast switching, high efficiency, and low conduction losses
Robust design with high short-circuit withstand capability
Low gate charge for improved drive efficiency
Low turn-on/turn-off losses
High current handling capability
Product Advantages
Suitable for various power conversion applications
Improved energy efficiency and system performance
Reliable and durable operation
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200 V
Collector Current (Max): 160 A
Collector-Emitter Saturation Voltage (Max): 2 V
Reverse Recovery Time: 86 ns
Gate Charge: 220 nC
Switching Energy: 1.5 mJ (on), 1.5 mJ (off)
Turn-on/Turn-off Delay Time: 18 ns / 150 ns
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal performance
Compatibility
Suitable for various power electronics applications, such as motor drives, solar inverters, and industrial power supplies
Application Areas
Industrial motor drives
Renewable energy systems (solar, wind)
Uninterruptible power supplies (UPS)
Power factor correction (PFC) circuits
General-purpose power conversion
Product Lifecycle
Currently available with no indication of discontinuation
Replacements and upgrades may become available in the future as technology evolves
Several Key Reasons to Choose This Product
High efficiency and low losses for improved system performance
Robust design with high short-circuit withstand capability for reliable operation
Fast switching and low gate charge for improved drive efficiency
Suitable for a wide range of power electronics applications
RoHS3 compliance for environmentally friendly use
