Manufacturer Part Number
ISL9V2040S3S
Manufacturer
onsemi
Introduction
The ISL9V2040S3S is an N-channel IGBT (Insulated-Gate Bipolar Transistor) from onsemi, designed for use in a variety of power conversion and control applications.
Product Features and Performance
High-performance IGBT with low conduction and switching losses
Optimized for efficient power conversion and control
Capable of handling up to 130W of power
Operating temperature range of -40°C to 175°C
Fast switching speed with typical turn-on/off delay of 3.64μs
Product Advantages
Excellent efficiency and low power dissipation
Reliable and robust design for demanding applications
Compact DPAK (TO-263) package for space-saving PCB layout
Suitable for a wide range of power conversion and control applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 430V
Collector Current (IC): 10A
On-state Voltage (VCE(on)): 1.9V @ 4V, 6A
Gate Charge (Qg): 12nC
Quality and Safety Features
Adheres to industry quality and safety standards
Robust design for reliable operation in harsh environments
Overcurrent and overvoltage protection mechanisms
Compatibility
Suitable for surface mount PCB assembly
Compatible with a variety of power conversion and control applications
Application Areas
Power supplies
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Industrial automation and control systems
Product Lifecycle
The ISL9V2040S3S is an active product and is currently available from onsemi. There are no plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
Excellent efficiency and low power dissipation, resulting in improved system performance and reduced cooling requirements
Robust and reliable design for use in demanding applications
Compact DPAK (TO-263) package for space-saving PCB layout
Wide operating temperature range, making it suitable for a variety of environmental conditions
Fast switching speed and low gate charge, enabling efficient power conversion and control