Manufacturer Part Number
ISL9V2040S3S
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-speed, logic-level-controlled insulated gate bipolar transistor (IGBT)
Product Features and Performance
High voltage rating up to 430V
High current rating up to 10A
Low on-state voltage drop (Vce(on)) of 1.9V at 6A
Fast switching speed with turn-off time of 3.64μs
Low gate charge of 12nC
Wide operating temperature range from -40°C to 175°C
Optimized for high-frequency, high-efficiency power conversion applications
Product Advantages
Efficient power conversion with low conduction and switching losses
Enables compact and lightweight power supply designs
Reliable performance in harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 430V
Collector Current (IC): 10A
On-State Voltage Drop (VCE(on)): 1.9V @ 6A, 4V gate drive
Turn-Off Delay Time (td(off)): 3.64μs
Gate Charge (Qg): 12nC
Quality and Safety Features
RoHS3 compliant
Qualified to industrial/automotive standards
Compatibility
Suitable for a wide range of power conversion applications, including switched-mode power supplies, motor drives, and industrial inverters
Application Areas
High-frequency, high-efficiency power conversion applications
Industrial motor drives and inverters
Switch-mode power supplies
Renewable energy systems
Product Lifecycle
This product is actively supported and available for purchase
Replacements or upgrades may be available in the future as technology advances
Several Key Reasons to Choose This Product
High voltage and current handling capability
Excellent efficiency with low conduction and switching losses
Fast switching speed for high-frequency operation
Wide operating temperature range for reliable performance in harsh environments
Compact and lightweight design enabling miniaturization of power electronics
RoHS3 compliance for environmental responsibility