Manufacturer Part Number
HGTG18N120BND
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-247-3 Package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 390 W
IGBT Type: NPT
Collector-Emitter Breakdown Voltage (Max): 1200 V
Collector Current (Max): 54 A
Collector-Emitter Saturation Voltage (Max): 2.7 V
Reverse Recovery Time: 75 ns
Gate Charge: 165 nC
Pulsed Collector Current: 160 A
Turn-On/Off Delay Time: 23 ns / 170 ns
Through Hole Mounting
Product Advantages
High power handling capability
Low on-state voltage drop
Fast switching performance
Reliable operation in high-temperature environments
Key Technical Parameters
Voltage Rating: 1200 V
Current Rating: 54 A
On-State Voltage Drop: 2.7 V
Reverse Recovery Time: 75 ns
Gate Charge: 165 nC
Quality and Safety Features
RoHS3 Compliant
Reliable operation within specified temperature range
Compatibility
Compatible with standard IGBT gate driver circuits
Application Areas
Power conversion and control systems
Motor drives
Switching power supplies
Industrial equipment
Product Lifecycle
Currently in active production
No immediate plans for discontinuation
Replacements and upgrades available
Several Key Reasons to Choose This Product
High power handling capability for demanding applications
Low on-state voltage drop for improved efficiency
Fast switching performance for high-frequency operation
Reliable operation in high-temperature environments
RoHS3 compliance for environmental responsibility
Compatible with standard IGBT gate driver circuits for ease of use
