Manufacturer Part Number
HGTG18N120BN
Manufacturer
onsemi
Introduction
High-performance IGBT transistor for power conversion and motor control applications.
Product Features and Performance
High blocking voltage of 1200V
High collector current rating of 54A
Fast switching with turn-on time of 23ns and turn-off time of 170ns
Low conduction losses with Vce(on) of 2.7V at 18A
High power handling capability of 390W
Designed for use in power conversion, motor drives, and industrial applications
Product Advantages
Excellent high voltage and high current handling capability
Fast switching and low conduction losses for high efficiency
Robust design for reliable operation
Suitable for a wide range of power conversion and motor control applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 1200V
Collector Current (IC): 54A
Collector-Emitter Saturation Voltage (VCE(sat)): 2.7V @ 18A
Gate Charge (Qg): 165nC
Switching Times (td(on)/td(off)): 23ns/170ns
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-247-3 package
Compatible with standard IGBT gate drive and control circuits
Application Areas
Power supplies
Motor drives
Inverters
UPS systems
Industrial equipment
Traction applications
Product Lifecycle
This product is currently in active production
Replacements and upgrades may become available in the future as technology advances
Key Reasons to Choose This Product
Excellent high voltage and high current handling capability
Fast, efficient switching performance
Robust and reliable design
Proven suitability for a wide range of power conversion and motor control applications
Manufactured to high quality standards
