Manufacturer Part Number
HGTG18N120BN
Manufacturer
Fairchild (onsemi)
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Product Features and Performance
N-channel non-punch-through IGBT
Low saturation voltage
Fast switching speed
High power density
High reliability
Product Advantages
Excellent electrical performance
Robust design
Improved efficiency
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 54 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
Gate Charge: 165 nC
Current Collector Pulsed (Icm): 165 A
Switching Energy: 800J (on), 1.8mJ (off)
Td (on/off) @ 25°C: 23ns/170ns
Quality and Safety Features
ROHS3 Compliant
Operating Temperature: -55°C ~ 150°C (TJ)
Compatibility
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Application Areas
High-power industrial applications
Motor drives
Power supplies
Welding equipment
Induction heating
Renewable energy systems
Product Lifecycle
Current production model
Replacement/upgrade options available
Key Reasons to Choose This Product
Excellent electrical performance with low saturation voltage and fast switching speed
Robust design for high reliability
Improved efficiency for better system performance
Wide operating temperature range
Compatibility with common industrial packages and mounting types
