Manufacturer Part Number
HGTG20N60A4
Manufacturer
onsemi
Introduction
IGBT transistor for power switching applications
Product Features and Performance
600V collector-emitter voltage rating
70A collector current rating
Low Vce(on) of 2.7V at 15V gate voltage and 20A collector current
Fast switching with turn-on and turn-off times of 15ns and 73ns respectively
High power handling capability of 290W
Wide operating temperature range of -55°C to 150°C
Product Advantages
High efficiency and low power loss
Fast and reliable switching
Robust and rugged design
Suitable for a wide range of power conversion applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 70A
Collector Current Pulsed (Max): 280A
Vce(on) (Max): 2.7V @ 15V, 20A
Gate Charge: 142nC
Switching Energy: 105μJ (on), 150μJ (off)
Switching Times: 15ns (on), 73ns (off)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
TO-247-3 package
Suitable for a wide range of power electronics applications
Application Areas
Power conversion
Motor drives
Renewable energy systems
Industrial equipment
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High power handling and efficiency
Fast and reliable switching performance
Robust and reliable design for demanding applications
Wide operating temperature range
Compatibility with common power electronics systems
