Manufacturer Part Number
HGTG20N60B3D
Manufacturer
onsemi
Introduction
High-voltage, high-current IGBT transistor suitable for various power electronics applications.
Product Features and Performance
Voltage rating up to 600V
Current rating up to 40A
Low on-state voltage drop
Fast switching capability with reverse recovery time of 55ns
Gate charge of 80nC
Pulsed collector current up to 160A
Wide operating temperature range of -40°C to 150°C
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Suitable for high-power applications
Compact and easy to integrate design
Key Technical Parameters
Collector-Emitter Voltage (VCES): 600V
Collector Current (IC): 40A
Saturation Voltage (VCE(ON)): 2V @ 15V, 20A
Reverse Recovery Time (trr): 55ns
Gate Charge (Qg): 80nC
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Suitable for various power conversion and motor control applications
Application Areas
Inverters
Converters
Motor drives
Welding equipment
Induction heating
Power supplies
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High voltage and current capabilities
Efficient and fast switching performance
Robust and reliable design
Wide operating temperature range
Compact and easy to integrate package
Compliance with RoHS3 standards
Availability of replacement and upgrade options
HGTG20N120CNDFairchild (onsemi)