Manufacturer Part Number
HGTG30N60B3
Manufacturer
onsemi
Introduction
High-power IGBTs (Insulated Gate Bipolar Transistors) designed for high-frequency switching applications.
Product Features and Performance
600V, 60A IGBT
Low Vce(on) of 1.9V @ 15V, 30A
High current handling capability up to 220A pulsed current
Fast switching speeds with turn-on/off times of 36ns/137ns
Low switching energy loss of 500μJ (turn-on) and 680μJ (turn-off)
Product Advantages
Excellent efficiency and thermal performance
Robust and reliable design for high-power applications
Suitable for high-frequency switching circuits
Key Technical Parameters
Voltage Rating: 600V
Current Rating: 60A (continuous), 220A (pulsed)
Vce(on): 1.9V @ 15V, 30A
Switching Energy: 500μJ (on), 680μJ (off)
Switching Times: 36ns (turn-on), 137ns (turn-off)
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for high power handling
Compatibility
Suitable for a wide range of high-power, high-frequency switching applications
Application Areas
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Other high-power, high-frequency switching applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-power applications
Fast switching speeds and low switching energy losses for high-frequency operation
Robust and reliable design for demanding applications
Suitable for a wide range of high-power, high-frequency switching requirements
HGTG3N60B3Fairchild (onsemi)