HGTG30N60B3 - onsemi

Manufacturer Part Number

HGTG30N60B3

Manufacturer

onsemi

Introduction

High-power IGBTs (Insulated Gate Bipolar Transistors) designed for high-frequency switching applications.

Product Features and Performance

600V, 60A IGBT

Low Vce(on) of 1.9V @ 15V, 30A

High current handling capability up to 220A pulsed current

Fast switching speeds with turn-on/off times of 36ns/137ns

Low switching energy loss of 500μJ (turn-on) and 680μJ (turn-off)

Product Advantages

Excellent efficiency and thermal performance

Robust and reliable design for high-power applications

Suitable for high-frequency switching circuits

Key Technical Parameters

Voltage Rating: 600V

Current Rating: 60A (continuous), 220A (pulsed)

Vce(on): 1.9V @ 15V, 30A

Switching Energy: 500μJ (on), 680μJ (off)

Switching Times: 36ns (turn-on), 137ns (turn-off)

Quality and Safety Features

RoHS3 compliant

TO-247-3 package for high power handling

Compatibility

Suitable for a wide range of high-power, high-frequency switching applications

Application Areas

Motor drives

Inverters

Uninterruptible power supplies (UPS)

Welding equipment

Induction heating

Other high-power, high-frequency switching applications

Product Lifecycle

This product is currently available and not nearing discontinuation.

Replacement or upgrade options may be available from onsemi.

Key Reasons to Choose This Product

Excellent efficiency and thermal performance for high-power applications

Fast switching speeds and low switching energy losses for high-frequency operation

Robust and reliable design for demanding applications

Suitable for a wide range of high-power, high-frequency switching requirements