Manufacturer Part Number
HGTG30N60A4D
Manufacturer
onsemi
Introduction
Single IGBT transistor with high-speed switching performance
Product Features and Performance
High power and current handling capability
Low on-state voltage
Fast switching speed
Reliable and rugged design
Product Advantages
Suitable for high-power, high-frequency applications
Efficient power conversion
Compact and space-saving design
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 75A
On-State Voltage (Max): 2.6V
Reverse Recovery Time: 55ns
Gate Charge: 225nC
Pulse Collector Current: 240A
Switching Energy: 280J (on), 240J (off)
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
TO-247-3 package
Suitable for high-power, high-frequency applications
Application Areas
Power inverters
Motor drives
Switched-mode power supplies
Induction heating
Welding equipment
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
High power and current handling capability
Fast switching speed for efficient power conversion
Reliable and rugged design
Compact and space-saving package
Suitable for a wide range of high-power, high-frequency applications
HGTG40N60A4Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTO