Manufacturer Part Number
HGTG30N60A4
Manufacturer
onsemi
Introduction
IGBT transistor for power applications
Product Features and Performance
600V collector-emitter breakdown voltage
75A collector current rating
Low Vce(on) of 2.6V at 15V gate, 30A collector current
Fast switching with 25ns turn-on and 150ns turn-off delays
High power handling capability up to 463W
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power conversion
High frequency switching capability
Suitable for various power electronics applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (Max): 75A
Collector Current (Pulsed): 240A
Vce(on) (Max): 2.6V @ 15V, 30A
Gate Charge: 225nC
Switching Energy: 280μJ (on), 240μJ (off)
Switching Delays: 25ns (on), 150ns (off)
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal performance
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Motor drives
Power supplies
Welding equipment
Industrial automation
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future.
Key Reasons to Choose This Product
Robust and reliable performance for demanding power applications
Efficient power conversion with low Vce(on) and fast switching
Wide operating temperature range for versatile use
High power handling capability up to 463W
Compact and reliable TO-247-3 package
HGTG3N60B3Fairchild (onsemi)