Manufacturer Part Number
HGTG30N60B3
Manufacturer
Harris Corporation
Introduction
High-power discrete semiconductor product
Single transistor with IGBT (Insulated Gate Bipolar Transistor) technology
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Power rating: 208W (max)
Collector-Emitter Breakdown Voltage: 600V (max)
Collector Current: 60A (max)
Collector-Emitter Saturation Voltage: 1.9V @ 15V, 30A
Gate Charge: 170nC
Collector Pulsed Current: 220A
Switching Energy: 500J (on), 680J (off)
Turn-on/Turn-off Delay Time: 36ns/137ns
Product Advantages
Robust IGBT design for high-power applications
Efficient power switching performance
Wide operating temperature range
Key Technical Parameters
Voltage, Current, Power, Switching Characteristics
Quality and Safety Features
RoHS non-compliant
Compatibility
TO-247 package and through-hole mounting
Application Areas
Power supplies, motor drives, inverters, and other high-power electronic applications
Product Lifecycle
No information on discontinuation or availability of replacements/upgrades
Key Reasons to Choose This Product
Proven IGBT technology for reliable high-power performance
Wide operating temperature range for versatile applications
Efficient switching characteristics for improved system efficiency
