HGTG30N60C3D - onsemi

Manufacturer Part Number

HGTG30N60C3D

Manufacturer

onsemi

Introduction

This is a discrete semiconductor product, specifically a transistor in the IGBT (Insulated Gate Bipolar Transistor) category, single-packaged.

Product Features and Performance

Operates in the temperature range of -40°C to 150°C (TJ)

Maximum power of 208 W

Collector-Emitter Breakdown Voltage (max) of 600 V

Maximum Collector Current (Ic) of 63 A

Maximum Collector-Emitter Saturation Voltage (Vce(on)) of 1.8 V at 15 V Vge and 30 A Ic

Reverse Recovery Time (trr) of 60 ns

Gate Charge of 162 nC

Maximum Pulsed Collector Current (Icm) of 252 A

Switching Energy of 1.05 mJ (on) and 2.5 mJ (off)

Product Advantages

Robust and reliable performance

Efficient power switching capabilities

Suitable for a wide range of applications

Key Technical Parameters

RoHS3 compliant

TO-247-3 package

Through-hole mounting

Quality and Safety Features

Complies with RoHS3 requirements

Ensures safety and reliability in operation

Compatibility

Suitable for various applications requiring high-power, high-voltage transistors

Application Areas

Power electronics

Industrial equipment

Motor drives

Welding machines

Renewable energy systems

Product Lifecycle

Currently available and not nearing discontinuation

Replacement or upgrade options may be available

Several Key Reasons to Choose This Product

Excellent power handling and switching capabilities

Wide operating temperature range

Reliable and robust performance

Compliance with RoHS3 standards

Suitable for a variety of industrial and power electronics applications