Manufacturer Part Number
HGTG40N60A4
Manufacturer
onsemi
Introduction
High-power insulated-gate bipolar transistor (IGBT)
Product Features and Performance
Optimized for high-speed switching applications
Low on-state voltage
Low switching losses
High blocking voltage capability
High current handling capability
Product Advantages
Improved efficiency
Reduced heat generation
Enhanced reliability
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 75A
On-state Voltage Drop (max): 2.7V
Gate Charge: 350nC
Switching Energy (on/off): 400J/370J
Turn-on/Turn-off Delay Time: 25ns/145ns
Quality and Safety Features
RoHS3 compliant
TO-247-3 package
Compatibility
Suitable for high-power switching applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Product Lifecycle
This product is an active, widely-used IGBT from onsemi.
Replacements and upgrades are readily available.
Key Reasons to Choose This Product
High power handling capability
Efficient switching performance
Reliable and robust design
Broad application suitability