Manufacturer Part Number
HGTP10N120BN
Manufacturer
onsemi
Introduction
High-performance non-punch-through IGBT for power electronics applications
Product Features and Performance
High voltage rating up to 1200V
High current rating up to 35A
Low on-state voltage drop of 2.7V at 10A
Fast switching with turn-on time of 23ns and turn-off time of 165ns
Low gate charge of 100nC
High surge current capability of 80A
Product Advantages
Excellent efficiency and reliability
Suitable for high-power applications
Easy to drive and integrate
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 1200V
Collector Current (Max): 35A
On-state Voltage (Max): 2.7V @ 10A
Switching Times: 23ns (on), 165ns (off)
Gate Charge: 100nC
Surge Current (Pulsed): 80A
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Through-hole TO-220-3 package
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Converters
Motor drives
Power supplies
Welding equipment
Industrial automation
Product Lifecycle
This IGBT model is an active and widely available product from onsemi.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Excellent efficiency and reliability
Fast switching performance
Easy to drive and integrate
Proven track record in various power electronics applications