Manufacturer Part Number
HGTG5N120BND
Manufacturer
onsemi
Introduction
The HGTG5N120BND is a discrete semiconductor product, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor.
Product Features and Performance
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 21 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Reverse Recovery Time (trr): 65 ns
Gate Charge: 53 nC
Current Collector Pulsed (Icm): 40 A
Switching Energy: 450J (on), 390J (off)
Td (on/off) @ 25°C: 22ns/160ns
Product Advantages
High voltage and current handling capabilities
Low on-state voltage drop
Fast switching speed
Compact and efficient design
Key Technical Parameters
IGBT Type: NPT
Power Max: 167 W
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a wide range of applications that require high-performance IGBT transistors.
Application Areas
Suitable for use in power electronics, motor drives, inverters, and other high-power applications.
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available, depending on application requirements.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Fast switching speed and low on-state voltage drop for improved efficiency
Compact and efficient design for space-constrained applications
RoHS3 compliance for environments with strict environmental regulations
Broad compatibility and suitability for a wide range of power electronics applications
HGTP11N120CNFairchild (onsemi)