HGTG5N120BND - onsemi

Manufacturer Part Number

HGTG5N120BND

Manufacturer

onsemi

Introduction

The HGTG5N120BND is a discrete semiconductor product, specifically an IGBT (Insulated Gate Bipolar Transistor) transistor.

Product Features and Performance

Voltage Collector Emitter Breakdown (Max): 1200 V

Current Collector (Ic) (Max): 21 A

Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A

Reverse Recovery Time (trr): 65 ns

Gate Charge: 53 nC

Current Collector Pulsed (Icm): 40 A

Switching Energy: 450J (on), 390J (off)

Td (on/off) @ 25°C: 22ns/160ns

Product Advantages

High voltage and current handling capabilities

Low on-state voltage drop

Fast switching speed

Compact and efficient design

Key Technical Parameters

IGBT Type: NPT

Power Max: 167 W

Operating Temperature: -55°C ~ 150°C (TJ)

Input Type: Standard

Mounting Type: Through Hole

Package / Case: TO-247-3

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for a wide range of applications that require high-performance IGBT transistors.

Application Areas

Suitable for use in power electronics, motor drives, inverters, and other high-power applications.

Product Lifecycle

This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available, depending on application requirements.

Key Reasons to Choose This Product

High voltage and current handling capabilities for demanding applications

Fast switching speed and low on-state voltage drop for improved efficiency

Compact and efficient design for space-constrained applications

RoHS3 compliance for environments with strict environmental regulations

Broad compatibility and suitability for a wide range of power electronics applications