Manufacturer Part Number
HGTG30N60C3D
Manufacturer
Fairchild (onsemi)
Introduction
High-performance IGBT transistor
Product Features and Performance
High power capacity up to 208 W
High voltage rating up to 600 V
High current rating up to 63 A
Fast switching with low reverse recovery time of 60 ns
Low on-state voltage drop of 1.8 V at 15 V, 30 A
Low gate charge of 162 nC
High pulsed current capability up to 252 A
Product Advantages
Excellent power handling capability
Fast and efficient switching
Low conduction losses
Reliable and robust design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (VCES): 600 V
Collector Current (IC): 63 A
Collector-Emitter Saturation Voltage (VCE(on)): 1.8 V
Reverse Recovery Time (trr): 60 ns
Gate Charge (Qg): 162 nC
Pulsed Collector Current (ICM): 252 A
Quality and Safety Features
Designed and manufactured to high quality standards
Complies with relevant safety regulations
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently available, no discontinuation planned
Key Reasons to Choose This Product
Excellent power handling capability
Fast and efficient switching performance
Low conduction losses for improved efficiency
Reliable and robust design for long-term operation
Suitable for a wide range of power electronic applications
HGTG3N60B3Fairchild (onsemi)