Manufacturer Part Number
HGTG20N60A4D
Manufacturer
onsemi
Introduction
High-performance IGBT transistor for use in power conversion applications
Product Features and Performance
High voltage operation up to 600V
High current handling up to 70A
Low on-state voltage drop of 2.7V at 20A
Fast switching with 35ns reverse recovery time
290W power handling capability
Operating temperature range of -55°C to 150°C
Product Advantages
Optimized for high efficiency power conversion
Reliable and durable performance
Compact TO-247-3 package
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 600V
Collector Current (max): 70A
On-State Voltage Drop: 2.7V at 20A
Reverse Recovery Time: 35ns
Gate Charge: 142nC
Switching Energy: 105J (on), 150J (off)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Standard IGBT input type
Compatible with TO-247-3 package
Application Areas
Power converters
Motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Industrial automation and control
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High voltage and current handling capability
Efficient and reliable performance
Fast switching for high-frequency applications
Compact and easy to integrate package
Proven reliability and quality
HGTG27N120BNFairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTO