Manufacturer Part Number
HGTG12N60A4D
Manufacturer
onsemi
Introduction
High-Voltage IGBT Transistor
Product Features and Performance
Optimized for high-power switching applications
Low on-state voltage drop
Fast switching speed
High current handling capability
Excellent short-circuit robustness
Reliable and rugged design
Product Advantages
Efficient power conversion
Improved system performance
Reduced power losses
Compact and reliable design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600 V
Current Collector (Ic) (Max): 54 A
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Reverse Recovery Time (trr): 30 ns
Gate Charge: 78 nC
Current Collector Pulsed (Icm): 96 A
Switching Energy: 55J (on), 50J (off)
Td (on/off) @ 25°C: 17ns/96ns
Quality and Safety Features
RoHS3 Compliant
Reliable and rugged design for harsh environments
Compatibility
TO-247-3 package
Suitable for high-power switching applications
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Optimized for high-power switching with low on-state voltage drop
Fast switching speed and high current handling capability
Excellent short-circuit robustness for reliable operation
Compact and reliable design for use in harsh environments
RoHS3 compliance for environmental sustainability