HGTG11N120CND - onsemi

Manufacturer Part Number

HGTG11N120CND

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors IGBTs Single

Product Features and Performance

RoHS3 Compliant

TO-247-3 Package

Operates from -55°C to 150°C (TJ)

Rated Power: 298 W

IGBT Type: NPT

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (Max): 43 A

Collector-Emitter Saturation Voltage: 2.4 V @ 15 V, 11 A

Reverse Recovery Time: 70 ns

Gate Charge: 100 nC

Collector Current (Pulsed): 80 A

Switching Energy: 950 μJ (on), 1.3 mJ (off)

Turn-on/Turn-off Delay Time: 23 ns/180 ns

Product Advantages

High power handling capability

Fast switching speed

Low conduction losses

Reliable and durable performance

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 1200 V

Collector Current (Max): 43 A

Collector-Emitter Saturation Voltage: 2.4 V @ 15 V, 11 A

Reverse Recovery Time: 70 ns

Gate Charge: 100 nC

Switching Energy: 950 μJ (on), 1.3 mJ (off)

Turn-on/Turn-off Delay Time: 23 ns/180 ns

Quality and Safety Features

RoHS3 Compliant

TO-247-3 Package for reliable performance and easy installation

Compatibility

Standard Input Type

Application Areas

Power electronics

Motor drives

Inverters

Welding equipment

Uninterruptible power supplies (UPS)

Renewable energy systems

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

High power handling capability (298 W)

Fast switching speed (23 ns/180 ns turn-on/turn-off delay)

Low conduction losses (2.4 V @ 15 V, 11 A Vce(on))

Reliable and durable performance (-55°C to 150°C operating temperature range)

RoHS3 compliance for environmental friendliness

TO-247-3 package for easy installation and robust design