Manufacturer Part Number
NGTB25N120FLWG
Manufacturer
onsemi
Introduction
High-performance trench field-stop IGBT device
Product Features and Performance
Optimized for high-frequency and high-efficiency applications
Low conduction and switching losses
Fast switching speed
High short-circuit capability
Low gate charge
Product Advantages
Improved energy efficiency
Reduced system size and cooling requirements
Reliable performance in demanding applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 1200 V
Collector Current (IC): 50 A
Collector-Emitter Saturation Voltage (VCE(on)): 2.2 V @ 15 V, 25 A
Reverse Recovery Time (trr): 240 ns
Quality and Safety Features
Qualified to AEC-Q101 standard for automotive applications
Robust design for reliable operation
Compatibility
Suitable for a wide range of applications, including motor drives, power supplies, and industrial equipment
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is currently in active production and availability.
Replacement or upgrade options may be available from onsemi.
Key Reasons to Choose This Product
Excellent energy efficiency and performance
Fast switching capability for high-frequency applications
Robust design for reliable operation in demanding environments
Compatibility with a wide range of applications
Automotive-grade quality and safety features
NGTB30N135IHRFairchild (onsemi)