NGTB20N135IHRWG - onsemi

Manufacturer Part Number

NGTB20N135IHRWG

Manufacturer

onsemi

Introduction

This product is a single Insulated Gate Bipolar Transistor (IGBT) from onsemi, designed for a wide range of power conversion and motor control applications.

Product Features and Performance

Trench Field Stop IGBT technology for improved performance and efficiency

High voltage rating of 1350V for operation in high voltage systems

High current rating of up to 40A continuous and 120A pulsed

Low on-state voltage of 2.65V @ 20A, 15V for low conduction losses

Fast switching with turn-off time of 245ns

Wide operating temperature range of -40°C to 175°C

Product Advantages

Efficient power conversion with low conduction and switching losses

Reliable and robust design for demanding applications

Suitable for high voltage, high current power electronics systems

Key Technical Parameters

Voltage Collector Emitter Breakdown (Max): 1350V

Current Collector (Ic) (Max): 40A

Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A

Gate Charge: 234nC

Current Collector Pulsed (Icm): 120A

Switching Energy: 600J (off)

Td (on/off) @ 25°C: -/245ns

Quality and Safety Features

RoHS3 compliant for environmental responsibility

TO-247 package for reliable through-hole mounting

Compatibility

Can be used in a wide range of power conversion and motor control applications

Application Areas

Inverters and converters for industrial motor drives

Switch-mode power supplies

Uninterruptible power supplies (UPS)

Welding equipment

Induction heating and other industrial power electronics

Product Lifecycle

Currently in active production

No plans for discontinuation, with ongoing support and availability

Several Key Reasons to Choose This Product

Excellent power conversion efficiency and performance

Robust and reliable design for demanding applications

Wide operating temperature range for versatility

RoHS3 compliance for environmental responsibility

Broad compatibility and suitability for various power electronics systems