Manufacturer Part Number
NGTB20N135IHRWG
Manufacturer
onsemi
Introduction
This product is a single Insulated Gate Bipolar Transistor (IGBT) from onsemi, designed for a wide range of power conversion and motor control applications.
Product Features and Performance
Trench Field Stop IGBT technology for improved performance and efficiency
High voltage rating of 1350V for operation in high voltage systems
High current rating of up to 40A continuous and 120A pulsed
Low on-state voltage of 2.65V @ 20A, 15V for low conduction losses
Fast switching with turn-off time of 245ns
Wide operating temperature range of -40°C to 175°C
Product Advantages
Efficient power conversion with low conduction and switching losses
Reliable and robust design for demanding applications
Suitable for high voltage, high current power electronics systems
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1350V
Current Collector (Ic) (Max): 40A
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
Gate Charge: 234nC
Current Collector Pulsed (Icm): 120A
Switching Energy: 600J (off)
Td (on/off) @ 25°C: -/245ns
Quality and Safety Features
RoHS3 compliant for environmental responsibility
TO-247 package for reliable through-hole mounting
Compatibility
Can be used in a wide range of power conversion and motor control applications
Application Areas
Inverters and converters for industrial motor drives
Switch-mode power supplies
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating and other industrial power electronics
Product Lifecycle
Currently in active production
No plans for discontinuation, with ongoing support and availability
Several Key Reasons to Choose This Product
Excellent power conversion efficiency and performance
Robust and reliable design for demanding applications
Wide operating temperature range for versatility
RoHS3 compliance for environmental responsibility
Broad compatibility and suitability for various power electronics systems
NGTB15N60S1EGonsemiIGBT 600V 30A 117W TO220-3