Manufacturer Part Number
NGTB20N120IHRWG
Manufacturer
onsemi
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) device for use in power electronics applications.
Product Features and Performance
Trench Field Stop IGBT technology for high efficiency and fast switching
Rated for up to 1200V collector-emitter voltage and 40A collector current
Low on-state voltage drop (Vce(on) = 2.45V @ 20A, 600V)
Fast turn-off switching speed (Td(off) = 235ns)
High peak current capability (Icm = 120A)
Wide operating temperature range (-40°C to 175°C)
384W maximum power dissipation
Product Advantages
Excellent efficiency and performance for power conversion applications
Reliable operation under high voltage and current conditions
Compact and easy to integrate design in TO-247 package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 40A
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A
Gate Charge: 225nC
Current Collector Pulsed (Icm): 120A
Switching Energy: 450J (off)
Td (on/off) @ 25°C: -/235ns
Quality and Safety Features
RoHS3 compliant
TO-247 through-hole package for reliable mounting
Compatibility
Standard IGBT gate drive requirements
Application Areas
Power conversion and motor drive applications
Inverters, converters, and switching power supplies
Industrial, renewable energy, and transportation systems
Product Lifecycle
Current production, no plans for discontinuation
Replacements and upgrades available as technology evolves
Key Reasons to Choose This Product
Exceptional performance and efficiency in a compact package
Reliable and robust operation under high voltage and current conditions
Optimized for power electronics applications requiring high power density and fast switching
Compatibility with standard IGBT gate drive circuits simplifies integration
